Formation of ic wiring pattern

Abstract

Abstract PURPOSE:To form an IC pattern of a composite film constituted by a high-melting point metal and Si, by a method wherein a composite film is formed at a predetermined composition ratio on a substrate to be formed with the film by magnetically moving the palsma generation position at a planar magnetron sputtering electrode. CONSTITUTION:Magnetic ples 23, 24 are provided such as to produce lines of magnetic force 25 which generate a plasma 30a stretching between two substances constituting a target flat plate 21 which is composed of a target 21A of a substance A and a target 21B of a substance B. The position of generation of the plasma is moved by controlling the line of magnetic force produced at the magnetic pole serving as a part of the source of line of magnetic force such as to move the distributed position of the lines of magnetic force produced at the other magnetic poles. On a substrate 10, a composite thin film constituted by the substances A, B is formed from an erosion part 28a.

Inventors

• 👤 Hide Kobayashi
• 👤 秀 小林
• 👤 Kazuyuki Fujimoto
• 👤 藤本　一之
• 👤 Yoshio Nakagawa
• 👤 宣雄 中川
• 👤 Katsuo Abe
• 👤 勝男 阿部
• 👤 Tsuneaki Kamei
• 👤 亀井　常彰

Bibliographic Details