Method for dividing silicon single crystal chip

Abstract

Abstract PURPOSE:To simplify the preparation process, by applying a scribe line to the preset sections of a Si single crystal substrate using anisotropic etching. CONSTITUTION:An surface-protecting film 12 (e.g. SiO2 film) is applied to the principal face of an Si substrate 11 having a plane index of (100) by e.g. CVD process. Subsequently, the face is masked to attain a scribing direction of <110>, and the openings 13, 14 are formed by conventional photo-lithography and etching process to obtain the pattern shown in the figure. The opening 14 is interrupted by the crossing point of the dividing lines P and Q, and is composed of the linear opening 15 extending along the lines P, Q and the dot-like opening 16 formed at the crossed point of the lines P and Q. Thereafter, the substrate 11 is etched through the openings 13 and 14 with an anisotropic etchant such as pyrocatechol, etc. A cantilever 17 of SiO2 is left in the part etched through the opening 13, and a V-shaped groove 18 and a pyramidal pit 19 are formed as scribe line in the part etched through the opening 14.

Inventors

• 👤 Katsuhiro Kinoshita
• 👤 木下　勝裕
• 👤 Masaki Teshigahara
• 👤 勅使川原　正樹
• 👤 Mitsutaka Kato
• 👤 加藤　充孝
• 👤 Seisuke Hinota
• 👤 日野田　征佑

Bibliographic Details