Preparation of gaas single crystal

Abstract

Abstract PURPOSE:To prepare a GaAs single crystal having high purity and low dislocation density, by using a boat assembly composed of an inner boat made of pyrolytic boron nitride and an outer boat made of a heat-insulating rigid material. CONSTITUTION:The inner boat 1 containing GaAs 4 is made of pyrolytic boron nitride and has a thickness of about 1mm.. The outer boat 2 supporting the inner boat 1 is made of a heat-insulating rigid material, e.g. quartz having a thickness of about 5mm.. The material 5 is a heat-insulating spacer. When 2.5kg of a GaAs single crystal is grown in the boat assembly without doping, a semiinsulating crystal having a specific resistance of 10<7>-10<8> excepting about 20mm. from the rear end of the ingot can be obtained. The dislocation density of the ingot excepting 20mm. from both ends of the ingot is about <=1X10<3>/cm<3>.

Inventors

• 👤 Toshiya Toyoshima
• 👤 豊島　敏也
• 👤 Seiji Mizuniwa
• 👤 清治 水庭
• 👤 Tomoki Inada
• 👤 稲田　知己
• 👤 Junkichi Nakagawa
• 👤 中川　順吉

Bibliographic Details