Fabrication of semiconductor device

Abstract

Abstract PURPOSE:To realize the masking only in two times without forming a film by using a corrosion resistant agent layer which has been used for selective etching of silicon nitride film as the mask for ion implantation. CONSTITUTION:A silicon oxide film 44 is formed by heat processing on the surface of substrate and a silicon nitride film 46 is deposited thereon. After selectively arranging a photo sensitive corrosion resistant agent layer 48 in such a manner as it has a through hole surrounding the N channel FET arranging region on a film 46, the film 46 is selectively etched with the layer 48 used as the mask. Thereafter, the boron ion is selectively implanted to the surface of substrate with the layer 48 used as the mask. Then, after arranging a layer 50 similar to the layer 48 on the surface of substrate, the film 46 is etched with the film 50 used as the mask. The phosphor ion is implanted to the surface of substrate with the layer 50 used as the mask. Thereafter, necessary processings are executed.

Inventors

• 👤 Shigeru Suga
• 👤 茂 菅

Bibliographic Details