Separating method by dielectric

Abstract

Abstract PURPOSE:To obtain an insulating isolation layer simply by filling a groove formed through reactive ion etching with the dielectric through a bias sputtering method being executed while applying bias to a substrate. CONSTITUTION:An epitaxial layer 2, an SiO2 film 4 and an Si3N4 film 5 are superposed on the (100) face of the Si substrate 1 and windows are bored selectively, and the grooves 7 are formed through a reactive ion etching method through which side surfaces are hardly etched. The inner surfaces of the grooves are coated with SiO2 8, the film 5 is removed, and an Si3N4 film 9 is formed newly through a CVD method. SiO2 10 is deposited through sputtering while applying bias to the substrate 1. The deeper groove 7 is buried more quickly at that time, and the irregularity of the surface of SiO2 after filling is small. The whole upper surface is etched by plasma to remove the excessive material 10, the Si3N4 film 9 is exposed, and an Si3N4 film 11 is deposited, thus completing the isolation grooves.

Inventors

• 👤 Toshihiko Takakura
• 👤 俊彦 高倉
• 👤 Takashi Ishikawa
• 👤 孝 石川
• 👤 Akihisa Uchida
• 👤 明久 内田
• 👤 Katsumi Ogiue
• 👤 荻上　勝己

Bibliographic Details