Semiconductor device

Abstract

Abstract PURPOSE:To obtain a resin-sealed device having good moistureproofness and an alpha-ray shielding property, by covering the device directly or through an insulating material with a material comprising an imide polymer having repeating units represented by a specified general formula. CONSTITUTION:A polyamide acid (precursor) is prepared from an aromatic diamine of formula VIII and a derivative of an aromatic or aliphatic tetracarboxylic acid in a molten state or at a low temperature in acetone through a reaction between one equivalent of the amino group and two equivalents of the carboxyl group. Thereafter, the precursor is applied on a substrate, heated and dried to effect ring closure, thereby affording a final or modified polyimide. In case an acid anhydride is used as the derivative of a tetracarboxylic acid, the above reaction is conducted within the temperature range of -20-+50 deg.C, and in case a free carboxylic acid or its ester is used, the reaction is conducted within the temperature range of 40-200 deg.C. Thereafter, the polyamide acid is heated at a high temperature of 200-500 deg.C to effect imide ring closure and obtain the final polymer. Because of the above-described structure, a protective film having excellent long-time moistureproofness and alpha-ray shielding property can be obtained.

Inventors

• 👤 Shunichi Numata
• 👤 俊一 沼田
• 👤 Koji Fujisaki
• 👤 藤崎　康二
• 👤 Tokuyuki Kaneshiro
• 👤 徳幸 金城

Bibliographic Details