Photovoltaic element

Abstract

Abstract PURPOSE:To improve photoelectric conversion efficiency by a method wherein a first PI lamination with a large forbidden band gap and a second IN lamination with a smaller forbidden band gap are junctioned in this order to each other from the end of a surface of incidence so that light with its wavelength in the vicinity of 500nm, at which length the solar radiation is the most intensive, may be absorbed with high efficiency. CONSTITUTION:On a glass substrate 21, a transparent conductive film 22, P type a-SiC:H layer 23, I type a-SiC:H layer 24, I type a-Si:H layer 25, N type a-Si: H layer 26, and rear side metal electrode 27 are formed on this order. The relative sensitivity of a photovoltaic element thus constructed is represented by a curve 14. In the curve 14, when compared with the sensitivity curve 12 of a conventional type a-Si:H PIN photovoltaic element, the region occupied by absorbed wavelengths greatly expands toward the region of shorter wavelength side. When exposed to a solar beam of 100mW/cm<2>, for example, the conventional type P-I-N a-Si:H shows a conversion rate of 6.5% per cm<2>, while with the new element, the rate is as high as 7.75% under the same conditions.

Inventors

• 👤 Kenji Maekawa
• 👤 前川　謙二
• 👤 Yukihisa Takeuchi
• 👤 幸久 竹内
• 👤 Masaaki Mori
• 👤 正昭 森
• 👤 Toshiaki Nishizawa
• 👤 西沢　俊明

Bibliographic Details