Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To lessen generation of a short-channel effect and a hot carrier by a method wherein a region of the same conductive type as a substrate having the impurity density lower than that of a substrate is provided between a source and drain region and a channel region. CONSTITUTION:A region 204 of the same conductive type as the substrate 203 having the impurity density lower than that of the substrate is provided between the source and drain region 201 and a channel region 202. Besides, said region 204 is positioned outside a gate electrode 205. As a result, a semiconductor device having a low short-channel effect and a hot carrier can be obtained even when a gate length is microscopically formed at 1mum or less.

Inventors

• 👤 Katsuhiro Kawabuchi
• 👤 川「淵」　勝弘

Bibliographic Details