Mis type semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To suppress the generation of a hot electron by a method wherein the channel forming region located below a gate electrode is formed in such a manner that it is composed of two regions having different impurity density of the same conductive type as the substrate. CONSTITUTION:The channel forming region to be located below the gate electrode 204 is composed of two regions having different impurity density with each other of the same conductive type as the substrate 201. Said channel forming region is divided into two parts - one is the region 206 having relatively thin impurity density, to be located adjoining to a source and drain diffusion layer 205, and the other is the region 207 having the impurity density thicker than the region 206 to be located inside the region 206. According to this constitution, the generation of hot electron on an MIS transistor can be suppressed by lessening the electric field in the region 206 of a channel region. Also, the unnecessary expansion of the channel region of a depletion layer can be prevented by the region 207, thereby enabling to prevent the short-channel effect.

Inventors

• 👤 Masaki Sato
• 👤 正毅 佐藤
• 👤 Makoto Yoshimi
• 👤 信 吉見

Bibliographic Details