Semiconductor device

Abstract

Abstract PURPOSE:To obtain a device of high reliability by a method wherein the entire surface except the connection part of the first Al wiring is covered with a double layer film of an Si3N4 and an SiO2, and the second Al wiring is superposed, one upon another. CONSTITUTION:Apertures are opened through the SiO2 film 102 on an Si substrate 101, the Al wiring 103 is provided, and the Si3N4 108 and the SiO2 104 are laminated. When apertures are opened through the film 104 with the mixed solution of HF+NH4F, and apertures are slowly opened through the film 108 by plasma etching using CF4, the thin Al wiring layer 103 is not damaged. Next, the Al wiring 107 is superposed. This constitution causes perfect conduction with the upper layer wiring without damages on the lower layer wiring, and therefore the reliability of the device improves.

Inventors

• 👤 Koichi Higuchi
• 👤 樋口　孝一
• 👤 Takehiko Kubota
• 👤 久保田　武彦

Bibliographic Details