Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To obtain an IC of a high density and multifunctions by providing a shift register element or a memory element at a wiring region between gate arrays. CONSTITUTION:A CCD 23 having transfer electrodes 22 along the gate arrays 20 exists at the center of the arrays of the active element provided at fixed intervals on an Si substrate, and an output electrode 24 and an output diffused layer 25 exist at the end part. Input electrodes 26 are provided on both sides of the CCD, an input diffused lay 27 are provided between the gate arrays 20 by corresponding to the gate, Al wiring 28 is performed between a fixed gate, an Al wiring 29 and a clock wire 30 are attached on the electrode 26 and the device 23, and a test shift register can be formed between the gate arrays 20 by utilizing an unused region; therefore the integration degree can be improved. Besides, the CCD 23 has a simple structure and can be easily formed at a wiring region, and can be applied to the memory element in addition to the shift register, further to a delay circuit; accordingly the circuit function can be enlarged.

Inventors

• 👤 Masayasu Otani
• 👤 尾谷　昌康

Bibliographic Details