Semiconductor device

Abstract

Abstract PURPOSE:To improve the reliability of the titled and mounting, and to reduce cost by forming a gold plated layer only on the exposed surface of an external lead while using an element except gold, such as nickel or rhodium or the like as a foundation plating layer in the semiconductor device of a structure in which a semiconductor element is sealed by a ceramic base body through low melting- point glass by using a lead frame. CONSTITUTION:The Au plated layer 11 is disposed only on the exposed surface of the Fe/Ni alloy external lead 4 projecting to the outside from surfaces, on which a ceramic-base 1 and a ceramic-cap 5 are joined through low melting- point glass 2, through the Ni or rhodium plated layer 10 as a foundation metallic layer. Minute sliding abrasion in socket mounting and abrasion on mounting or demounting reduce by gold sheath plating. Since strike gold through which a large amount of hydrogen are generated on plating treatment is not used as the foundation plating layer, the reduction of the surface of low melting-point glass is prevented, and mutual electric leakage between the external leads is obviated. The corrosion of the external leads is prevented because a pin hole is interrupted from a metal surface by the foundation plating layer. The thickness of gold plating is thin, and thereby the cost is reduced.

Inventors

• 👤 Toshio Hamano
• 👤 浜野　寿夫

Bibliographic Details