Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the reliability and the integration of wirings by preventing the increase of wiring resistance due to the thickness decrease of a conductive film and the reaction between Al and Si from occurring by a method wherein the fine contact holes formed on an insulating film are coated with a metal with high melting and separating point or a silicide thereof while the wiring layer is anisotropically etched and the metal with high melting and separating point or silicide thereof is isotropically plasma-etched. CONSTITUTION:The contact holes 26 with opening dimension of 1mum is respectively formed on the parts located on the diffused layers 25, 26 of a silicon oxide film 27 on a p type silicon substrate 21. Firstly the overall surface of the film 27 is coated with a molybdenum film 29 using vapor growth process. Secondly the overall surface of the film 29 is coated with an aluminium film 30 0.5mum thick. Then a wiring layer may be formed by forming a resist pattern for wiring, anisotropically dry-etching the film 30 or isotropically plasma-etching the film 29.

Inventors

• 👤 Masaki Sato
• 👤 正毅 佐藤

Bibliographic Details