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JPS5960702A Expired / Lapsed JP ⏱️ 0.0 years remaining

Production of ni stamper

Assignee: Toshiba Corp
•
Filing: 1982-09-30
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Granted: —
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Expires: 2002-09-30
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Abstract

Abstract PURPOSE:To obtain a stamper which excels in transcription performance by producing a master disk without using photoresist and applying an Au film in lien of an Ag film to the master disk. CONSTITUTION:A metallic target of a low fusing point of Te is used on a glass substrate 21, and the reactive sputtering is carried out in a gaseous mixture of Ar and CH4. As a result, a Te-C-H reactive thin film containing C and H is formed in a Te thin film. A laser is exposed to the Te-C-H thin film to form a groove of a continuous spiral projected pattern, and a master disk 25 containing a micropattern layer 22. Then an Au or Au alloy film is formed on the layer 22 by a sputtering or electron beam vapor deposition process. Thus a coated layer 23 having 200-1,500Angstrom thickness needed for Ni electrodeposition is formed, and an Ni layer 24 of 200-300mum is formed on a conductive film by an Ni electrodeposition process. This layer 24 is separated from the disk 25 to obtain a stamper to which a micropattern is transcribed.

Inventors

  • 👤 Norio Ozawa
  • 👤 小沢 則雄
  • 👤 Akio Hori
  • 👤 昭男 堀
  • 👤 Noburo Yasuda
  • 👤 安田 修朗
  • 👤 Takashi Koizumi
  • 👤 隆 小泉

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 05:02
CPC Classifications
G; G11; G11B; G11B23/00; G11B23/0057

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS5665341A Cited
JPS56145504A Cited

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