Semiconductor light emitting device

Abstract

Abstract PURPOSE:To obtain the two-color light emitting device of a low forward directional voltage by a method whrein a p type and an n type epitaxial layers are laminatedly grow to construct a first color light emitting semiconductor layer, a second color light emitting semiconductor layer constructed by laminating an n<-> type layer and a p<+> type layer is formed thereon interposing an n<+> type layer between them, and a cathode electrode and an anode electrode are provided respctively to the prescribed layers. CONSTITUTION:The p type GaP layer 12 made carrier concentration thereof to 2-3X10<17>/cm<3> by doping with Zn and O is grow liquid phase epitaixally on the p type GaP substrate 11 doped with Zn, and moreover the n type GaP layer 13 made concentration thereof to 1-2X10<17>/cm<3> is grown thereon to construct the red color light emitting semiconductor layer L1. Then the n<+> type GaP layer 20 doped with Te is grown on the whole surface, and the n<-> type GaP layer 14 doped with N and the p<+> type GaP layer 15 doped with N and Zn are laminated thereon to construct the green color light emitting semiconductor layer L2. After then, about a half of the layer L2 is removed, a common electrode K is provided on the exposed layer 20, and the electrodes A2, A1 are fixed respectively on the layer 15 and to the back of the substrate 11.

Inventors

• 👤 Hirohisa Abe
• 👤 阿部　洋久
• 👤 Fumiaki Sato
• 👤 文明 佐藤

Bibliographic Details