Method for implanting ion

Abstract

Abstract PURPOSE:To produce easily a stable discharge state and to implant stably H ions, by implanting H ions using a gaseous mixture of gaseous H2 with an inert gas as a gaseous starting material. CONSTITUTION:H ions are implanted using a gaseous starting material prepared by mixing gaseous pure H2 with an inert gas. The pressure range of the gaseous starting material in which electric discharge can be sustained is extended, so stable electric discharge can be sustained under reduced pressure of the gaseous starting materials. By reducing the pressure of the discharge gas, H ion beams in a stable discharge state are obtd. when the ratio of the inert gas is <=about 1/6, and the quantity of the beams is equal to or larger than that of beams generated using only gaseous pure H2. Since the inert gas is used, the periphery of the ion generating source is kept clean.

Inventors

• 👤 Hisao Matsudera
• 👤 久雄 松寺

Bibliographic Details