Non-volatile semiconductor device

Abstract

Abstract PURPOSE:To increase the capacity of a memory and to simplify the memory circuit configuration by forming insulating films in a double strucure of insulating films of different dielectric constants under a floating gate, forming the thickness of the insulating film of upper layer in the prescribed value or lower, and disposing a charge collecting center in the floating gate. CONSTITUTION:A field oxidized film 11 is formed on a P type substrate or a P type well 10 to form an element forming region, and an N<+> type regions 12, 13 which form source and drain regions are formed in the region. An SiO2 film 14 having a thickness of approx. 20Angstrom is formed on the surface of the element forming region, and an Si3N4 film 15 having a thickness of approx. 60Angstrom is formed at the position of the gate. A polysilicon is deposited on the film 15 to form a floating gate thereon. Further, an SiO2 film 17 is formed a relatively thickly thereon, a polysilicon is deposited thereon to form a control gate 18. Aluminum wirings 20 are electrically connected through contacting holes 21a, 21b to N<+> type regions 12, 13.

Inventors

• 👤 Nobuyuki Sato
• 👤 信之 佐藤
• 👤 Chikatake Uchiumi
• 👤 内海　京丈
• 👤 Shinji Nabeya
• 👤 鍋谷　慎二
• 👤 Ken Uchida
• 👤 憲 内田

Bibliographic Details