Photo-receiving device

Abstract

Abstract PURPOSE:To contrive high integration and to obtain a small-sized photo-receiving device by a method wherein a photo-receiving element is formed on the amorphous semiconductor region located on a non-single crystal substrate, and the peripheral circuit of the photo-receiving element which is electrically connected to the photo-receiving element is formed on a single crystal semiconductor region. CONSTITUTION:A photo-receiving element is formed on an amorphous region (A) 6, an MOS type peripheral circuit is formed on a single crystal silicon region (B) 7, and a photo-receiving device is constituted by electrically coupling the above-mentioned photo-receiving elements. A photo-receiving element is formed on an a-Si region by transforming an a-Si film 3 into an N type a-Si and then an N<+> type a-Si film 5 is deposited and a thin film circuit is formed, and the above is formed into a thin film active element. On the other hand, an MOS type peripheral circuit, having polycrystalline silicon as a gate electrode 8, is constituted on the single crystal silicon region (B) 7, and a source and drain region 9 is formed by doping impurities using the gate electrode 8 as a mask. Besides, a final protection film 10 is covered on the above, the light- receiving element and the peripheral circuit are coupled by forming an aluminum electrode 11 in vapor deposition, and the photo-receiving device such as image sensor and the like is obtained.

Inventors

• 👤 Junji Sakurai
• 👤 桜井　潤治

Bibliographic Details