Plasma vapor reactor

Abstract

Abstract PURPOSE:To improve productivity by disposing substrates at regular intervals in mutually parallel while setting up a heat source in the direction of the surfaces, to which films are formed, of the substrates and installing reaction vessels while mutually connecting them. CONSTITUTION:To improve the uniformity of film thickness and the homogeneity of film quality in the upper sections, lower sections, and central sections ans peripheral sections of the substrates 4, 4', the surfaces thereof to which the films are formed are arranged in approximately parallel at regular intervals of 3- 5cm, infrared lamps 11, 11' are set up in the direction of the surfaces, to which the films are formed, and the substrates 4, 4' are heated by the infrared heaters 11, 11' at 100-400 deg.C such as 200 deg.C. Since the heaters 11, 11' have cylindrical parts, the heaters are arranged in the directions in which the upper heaters and the lower heaters cross mutually at right angles, and spaces, particularly, cylindrical spaces, in the reaction vessels are kept at 200+ or -10 deg.C, preferably, within + or -5 deg.C.

Inventors

• 👤 Shunpei Yamazaki
• 👤 山崎　「しゆん」平

Bibliographic Details