Insulated gate type field-effect semiconductor device and its manufacture

Abstract

Abstract PURPOSE:To provide inter-element isolation technique, which does not damage a substrate, by oxidizing a film to be oxidized on a film having oxidation resistance formed on a base body and forming a field insulating film. CONSTITUTION:An impurity of the same conduction type as the substrate is doped to the film 14 to be oxidized so as not to reach an Si3N4 film 13. The film 14 to be oxidized is formed to a desired pattern, the impurity is diffused sufficiently through heat treatment, and the film 14 is oxidized. Consequently, an oxide film 16 formed is utilized as the field insulating film. The impurity in a film to be oxidized 14a is diffused gradually through said heat treatment and heat treatment on oxidation, and a channel stopper region 17 is formed only under the field insulating film 16. The Si3N4 film 13 and a first oxide film 12 are etched selectively to expose the surface of the substrate in the active region 17, and a gate insulating film 18 is formed.

Inventors

• 👤 Masashi Koyama
• 👤 小山　昌司

Bibliographic Details