Semiconductor thin film light emitting element

Abstract

Abstract PURPOSE:To obtain the desired light emitting colors by a method wherein an active layer with small Eg is held between the thin layers with large forbidden band width Eg providing an element with transparent electrode and a backside electrode changing the thickness of active layer. CONSTITUTION:A transparent electrode 2 made of InO2+Sn2O3, a ZnS layer 3, a ZnSe active layer 4 with small Eg than that of the layer 3, another ZnS layer 5 and a backside electrode 6 are laminated on a glass plate 1. At this time, a quantum well QW is formed enclosing electrons and holes in the active layer 4 facilitating light emission and recoupling improving the light emitting efficiency and reducing the driving voltage. Moreover, assuming the thickness of active layer to be L and the effective mass of electrons and holes to be me, mh, the substantial Eg equals to the value as follows, i.e. Eg=Eg(ZnSe)+h<2>/2me.(pi/L)<2>+ h<2>/2mh.(pi/L)<2>. Therefore, by means of changing the thickness L, Eg may be changed into the value as follows, i.e. Eg(ZnSe)<Eg<Eg(ZnS) producing all of the imtermediate colors of the proper light emitting colors of the materials of the layers 3, 5, and the active layer 4.

Inventors

• 👤 Hiroshi Fujiyasu
• 👤 洋 藤安
• 👤 Masaru Kaneko
• 👤 勝 金子
• 👤 Yoshiki Kurosawa
• 👤 黒沢　好樹

Bibliographic Details