Deposition of thin film

Abstract

Abstract PURPOSE:To deposit an insulating film on an uneven surface of a substrate with a good step coverage by performing etching and deposition at the same time and making deposition speed faster than etching speed. CONSTITUTION:An Al-1%Si alloy film 14 of 1mum thickness is deposited on a P type Si substrate 12 by a magnetron sputtering equipment and a resistor pattern 15 of 1mum width for Al wiring is also formed. Then Al film 14 is etched using the resistor pattern 15 as a masking and the resistor pattern 15 is removed. Then a silicon oxide film 16 is deposited by ion plating method in the atmosphere of O2/CF4 which contains CF4 whose floating ratio against O2 is 1/10. Then the second Al film 17 is deposited by magnetron sputtering method.

Inventors

• 👤 Tsunetoshi Arikado
• 👤 経敏 有門

Bibliographic Details