Heating of semiconductor wafer by irradiation of ray

Abstract

Abstract PURPOSE:To improve the uniformity of temperature distribution on the surface of a wafer, and to suppress the damage such as a large warp and a slip line by a method wherein the ratio of the specified physical property values of the semiconductor wafer and an auxiliary heat source is prescribed as to become specified value. CONSTITUTION:Both the faces of a wafer 1 are irradiated by ray according to surface illuminants from the upper side and the lower side to perform main heating. An auxiliary heat source 2 consisting of a high melting point metal to raise the temperature thereof receiving irradiation of ray is arranged in close vicinity to the outside circumferential neighboring part 1b. The value of the ratio alpha/beta of the physical property value alpha=(1-eta1)/rho1.d1.c1 of the auxiliary heat source to the physical property value beta=(1-eta2)/rho2.d2.c2 of the semiconductor wafer is prescribed as to become to 0.6-1.4. (eta1 and eta2 are reflectivities, rho1 and rho2 are specific gravities, d1 and d2 are thicknesses, and c1 and c2 indicate specific heats). Accordingly the speeds of temperature rise of the wafer 1 and the auxiliary heat source 2 become as to nearly coincide, and the temperature of the whole of the wafer 1 is unified.

Inventors

• 👤 Yoshiki Mimura
• 👤 芳樹 三村

Bibliographic Details