Manufacture of photo semiconductor device

Abstract

Abstract PURPOSE:To enable to attain partial removal of a semiconductor film according to laser without damging another film at the photo semiconductor device consisting of the laminate of the transparently conductive film and the semiconductor film by a method wherein the difference between the optical absorption factor characteristics of the respective films thereof is utilized. CONSTITUTION:The transparently conductive film 11 is adhered on the whole surface of a transparent substrate 10. Then adjoining interval parts 11 are removed according to irradiation of the laser beam, and individual and respective transparently conductive films 11a-11c are isolatedly formed. Then the amorphous Si film 12 is adhered on the whole surface of the substrate 10. Then adjoining interval parts 12' are removed according to the laser beam, and independent and respective amorphous Si films 12a-12c are isolatedly formed. In this case, wave length of the laser beam to be used is so selected as to make the laser beam absorption factor of the film 11 to become extremely lower than the film 12. Accordingly, even when the laser beam reaches the transparently conductive film parts 110 existing under the adjoining interval parts 12', the parts 110 thereof receive almost no damage.

Inventors

• 👤 Toshiaki Yokoo
• 👤 横尾　敏昭
• 👤 Takashi Shibuya
• 👤 澁谷　尚
• 👤 Masaru Takeuchi
• 👤 勝 武内

Bibliographic Details