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JPS5935487A Expired / Lapsed JP ⏱️ 0.0 years remaining

Manufacture of photo semiconductor device

Assignee: Sanyo Electric Co Ltd
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Filing: 1982-08-24
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Granted: —
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Expires: 2002-08-24
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Abstract

Abstract PURPOSE:To enable to suppress the interval between isolation regions to the minimum by a method wherein two electrode layers and a photo conductor layer formed extending over photo sensitive regions of the plural number are divided by irradiation of an energy beam after the laminate thereof is formed. CONSTITUTION:The transparent electrode layer 2 whose terminal parts 6a-6d are extended is formed on a transparent substrate 1. Then the photo conductor layer 3 is formed in the condition exposing the terminal parts 6a-6d. Then the back electrode 4 is adhered covering the layer 3. At this adhering process, extended parts 5ab-5cd from the layer 4 are connected electrically to the terminal parts 6a-6c. Then the adjoining interval parts 9ab-9cd of the laminate consisting of the layers 2-4 are removed according to irradiation of the laser beam to form the isolation regions 8ab-8cd. Accordingly, the optoelectric conversion regions 7a-7d of the plural number are isolated electrically according to the regions 8ab-8cd. According to this manufacturing method, the interval between isolation regions can be suppressed to the minimum, and utilization efficiency of light can be increased at a solar battery.

Inventors

  • 👤 Toshiaki Yokoo
  • 👤 横尾 敏昭
  • 👤 Takashi Shibuya
  • 👤 澁谷 尚
  • 👤 Masaru Takeuchi
  • 👤 勝 武内

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 01:49
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F71/00; H10F71/134; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

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References Cited (Backward Citations)

JPS5126064U Cited
US4315096A Cited

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