Semiconductor device

Abstract

Abstract PURPOSE:To obtain not only a gate array IC, but also a PROM IC, etc., on the same substrate at the MOS type semiconductor device having the first layer gate electrode wiring of polycrystalline Si, the second layer gate electrode wiring of a metal and the third layer electrode of the metal by a method wherein the gate electrode is made to be two layer structure according to the gate electrode wirings of the first layer and the second layer. CONSTITUTION:The offset transistor A and the FA MOS element B are formed on the Si substrate 101. Namely source.drain diffusion layers 103 having offset diffusion layers 104 are provided in the region A to be covered with a gate oxide film 102, the first layer polycrystalline Si gate electrode 105 is formed between the diffusion layers 104, and the electrode thereof is covered with the second layer Al electrode 107 interposing an insulating film betwen them. Moreover the polycrystalline Si gate electrode 105 to act as the floating gate is formed in the region B, the surface thereof is oxidized, the second layer Al control electrode 107 is provided interposing a generated oxide film 106 between them, the third layer Al wiring 109 is formed while insulating by an interlayer insulating film 108, the the wiring thereof is connected to the electrode 107.

Inventors

• 👤 Masahiro Yamada
• 👤 正弘 山田

Bibliographic Details