Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To each a ground substrate for forming a thin-film taperingly at high speed with excellent controllability by a comparatively simple device by discharging a gas containing no halogen, which can supply an active monomer by decomposition, and sputtering-etching the circumferential end section of the projecting section of the substrate while depositing a polymer on the flat section of the substrate and sputtering-etching the flat section. CONSTITUTION:A SiO2 film 12 in 1mum is formed on the single crystalline Si substrate 11, a resist is applied on the film 12 and exposed, and a resist pattern 13 with an opening in 1mum is formed. The whole is entered in a parallel plate type reactive ion etching device, the SiO2 12 is removed by using CF4+H2 gas while using the resist pattern 13 as a mask, C2H4 gas is introduced, and the surface is sputtering-etched in the same manner as said SiO2 etching. A monomer of CH is generated on glow discharge by introducing C2H4, and the circumferential end section of the projecting section is sputtering-etched while the flat section is protected by the deposition action of the CH polymer. The angle of taper is approximately 45 deg..

Inventors

• 👤 Iwao Tokawa
• 👤 東川　巌

Bibliographic Details