Manufacture of insulated gate type field effect transistor

Abstract

Abstract PURPOSE:To eliminate the thermal deterioration of a semiconductor substrate and a semiconductor layer in the steps of forming a gate insulated film by forming by an electron cyclotron resonance plasma CVD method the film at a low temperature on the surface of the substrate and obtaining the film merely by a low temperature heat treatment. CONSTITUTION:An N type semiconductor layer 2 is formed by thermal diffusion or ion implantation of N type impurity on the upper surface of semi-insulating or P type semiconductor substrate 1 made of InP. Source and drain electrodes 3, 4 of the prescribed pattern are formed on the layer 2. Then, a semiconductor layer 5 of the source region at the source electrode 3 side from the layer 2 and a semiconductor layer 6 of the drain region at the drain electrode 4 side are formed. A gate insulated film 20 on the surface of a mesa photodiode D is heat treated by an electron cyclotron resonance plasma CVD method at 150-200 deg.C for 1-4hr, and obtains as a gate insulated film 30 of its object. Then, a gate electrode 7 is formed between the electrodes 3 and 4 on the gate insulated film 30.

Inventors

• 👤 Koichi Wakita
• 👤 紘一 脇田
• 👤 Seitaro Matsuo
• 👤 松尾　誠太郎

Bibliographic Details