Semiconductor device

Abstract

Abstract PURPOSE:To obtain a P-ROM, which operates at high speed and can be erased electrically, by forming reading currents by carriers, which are isolated spatially from a region, into which an impurity is added, and have high mobility. CONSTITUTION:A non-doped GaAs layer 22, AlGaAs layers 23, into which a doner impurity is introduced selectively, and GaAs layers 24, into which an impurity is not doped or a doner impurity is introduced selectively, are grown on a semi-insulating GaAs substrate 21 in an epitaxial manner in succession. A first two-element electron gas layer 25 is formed in the vicinity of a hetero-junction interface with the layer of the layer 22 and a second two-element electron gas layer 26 in the vicinity of a hetero-junction interface between the layer 24 and the layer 23 by these semiconductor layers. A mask 27 is shaped in a gate electrode forming region, the layers 24, 23 are removed selectively to expose the layer 22, and N<+> type regions 28 are formed in source electrode-drain electrode forming regions. The layers 28 are conducted with the layer 25. Electrodes 29 and 30 are shaped on the regions 28 and a Schottky gate electrode 31 on the layers 24.

Inventors

• 👤 Shunichi Muto
• 👤 俊一 武藤
• 👤 Sukehisa Hiyamizu
• 👤 冷水　佐寿
• 👤 Hidetoshi Nishi
• 👤 西　秀敏

Bibliographic Details