Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To remove chlorine remaining in an insulating film, and to prevent an Al wiring film from corrosion when the Al wiring film is to be adhered on a semiconductor wafer interposing the insulating film between them, and plasma etching is to be performed to obtain the prescribed wiring pattern by a method wherein low temperature plasma etching is performed to the surface of the exposed insulating film using reactive gas containing fluorine. CONSTITUTION:An Al wiring film 1 is adhered on the surface of a semiconductor wafer 9 interposing an insulating film 2 between them, the wiring film is covered with a resist film 5 of the prescribed shape, and the film 1 exposing at the opening part of the film 5 is removed according to low temperature plasma etching using reactive gas containing chlorine to form the desired wiring pattern. After then, plasma treatment containing reactive gas 6 such as CF4, CF4+O2, etc. is performed to the exposing film 2 to remove the surface layer part of the film 2 containing chlorine elements 4. Accordingly, the chlorine elements in the ground film 2 are removed, and the wiring film 1 of top layer is prevented from corrosion.

Inventors

• 👤 Takeshi Hashimoto
• 👤 毅 橋本

Bibliographic Details