Phase control type high frequency sputtering apparatus

Abstract

Abstract PURPOSE:To form a thin film with a uniform thickness on a substrate, by applying high frequency power to the target electrode and the substrate electrode in a high frequency bias sputtering apparatus while changing an electrical phase. CONSTITUTION:In the sputtering chamber 5 of a high frequency bias sputtering apparatus, a substrate 10 to be subjected to sputtering treatment is attached to a substrate electrode 7 and a sputtering material 9 is attached to a target electrode 6. The high frequency output of a high frequency power source 4 is applied to not only the target electrode 6 but also the substrate electrode 7 through a phase controller 8 in a split state and the sputtering chamber 5 is evacuated to sputter the surface of the substrate 10 with the sputtering material 9. In this case, phase detecting circuits 11, 12 are placed in the middle parts of the power supply lines of both electrodes 6, 7 while the output signals thereof are changed to voltages proportional to the phase difference of a phase difference detector 13 and sputtering treatment is performed while the phase difference between the high frequency voltage of both electrodes 6, 7 is kept constant.

Inventors

• 👤 Kibatsu Shinohara
• 👤 己抜 篠原
• 👤 Yoshiaki Shimizu
• 👤 清水　美章
• 👤 Toshiaki Fujioka
• 👤 藤岡　俊昭

Bibliographic Details