Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a thick metal film faster by the CVD method at the temperature lower than the temperature at which the crystal structure in the surface starts recovering by a method wherein ions are implanted into a semiconductor substrate to make the surface of the substrate amorphous before the metal film is formed and the reactivity between the substrate and the introduced gas is improved. CONSTITUTION:An insulating protection film is formed on a semiconductor substrate and the insulating film is patterned by photoetching to expose some parts of the semiconductor substrate. Ions are implanted into the parts or the whole surface of the substrate so as to disturb the crystal structure in the surface and make the substrate surface amorphous. After that, without the heat- treatment, keeping the substrate surface amorphous, a thick metal layer (or layers) is formed on the exposed part (or parts) of the semiconductor substrate quickly by the CVD method at the temperature lower than 600 deg.C. For instance, in the manufacturing procedure of MOS transistor, after n<-> layers are formed by implantation of As<+> and the heat-treatment, As<+> ions are implanted again and at that state W films 7 are selectively formed on the source, drain and gate by the CVD method.

Inventors

• 👤 Yoshitaka Tsunashima
• 👤 綱島　祥隆

Bibliographic Details