Semiconductor integrated device

Abstract

Abstract PURPOSE:To hold the whole device at the predetermined potential about uniformly as well as to make the insulation among the elements nearly perfect by arranging a buried layer of the same conductive type as that of the semiconductor substrate in the part right under an isolation oxide film for surrounding insulation among the elements. CONSTITUTION:In the semiconductor integrated device for surrounding isolation among the elements formed on the semiconductor substrate 20 with an oxide film 19, a buried layer 23 of the same conductive type as that of the semiconductor substrate 20 is formed in the part right under said oxide film 19 around each element. For example, a P<+> type buried layer 23 is arranged in the part right under the isolation oxide film 19 for insulating a transistor 1 from a resistance 12 on the P type semiconductor substrate 20. This P<+> type buried layer 23 has a higher concentration compared with the semiconductor substrate 20, accordingly a resistance is also smaller.

Inventors

• 👤 Takeshi Takanori
• 👤 高乗　健

Bibliographic Details