Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to almost completely remove the damage due to evaporation suffered in the bumping electrode forming process without damaging the bumping form by a method wherein a thermal treatment is performed in a condition that a currnt film has been placed on the whole surface of a wafer and bumping electrodes are formed by electroplacing. CONSTITUTION:An MOS transistor 202 is formed in a silicon substrate wafer 201 and, after electrode lead-out holes 204 were bored on a surface oxide film 203 and a hole of a scribbing region 205 was bored, a wiring region 206 is formed, a vapor phase growing film 207 is grown and openings of bumping parts 208 and the scribbing region 205 are performed. A current film 209 is evaporated and Ti-Pt films 210 are formed. A thermal treatment is performed in the atmosphere of nitrogen and the recovery of characteristics of the MOS transistor and the adhesive power among the Ti-Pt films 210, the current film 209 and a wiring metal layer are made to increase. Electroplacing of gold or chrome copper, etc., is performed for heaping up bumping electrodes 211 and the current film 209 other than the one just below the bumping parts 208 is removed.

Inventors

• 👤 Isao Honma
• 👤 本間　勇夫
• 👤 Muneo Hiramitsu
• 👤 平光　宗生
• 👤 Yasushi Matsumi
• 👤 松見　康司
• 👤 Hitoshi Tsubone
• 👤 坪根　衡

Bibliographic Details