Method and apparatus for cleaning semiconductor manufacturing equipment

Abstract

Abstract PURPOSE:To clean the inside of a reaction furnace in a short time by a method wherein the gas, activated by a microwave, is introduced into the reaction furnace to dissolve the cleaning etching gas and the inside of the reaction furnace is cleansed by the obtained gas with etching property. CONSTITUTION:A microwave, generated by a microwave generator 14, is introduced into an exciting gas supplying tube 16 through a waveguide made of quartz glass. The exciting gas supplying tube 16 is provided to the gas outlet side of a reaction furnace 1 with its blowoff nozzle directed toward a specimen chamber 2. The exciting gas, such as hydrogen gas, which is let blow into the reaction furnace 1 by the exciting gas supplying tube 16, is activated and ionized by the exposure in the microwave and reaches the reaction furnace 1. Cleaning etching gas, such as CF4 and CF4+U2, is supplied into the reaction furnace 1 by a gas supplying source 7 and the cleaning etching gas is turned into the gas with etching property by introducing the activated exciting gas. With this gas with etching property, amorphous Si and the like, adhered and deposited on the surface of the wall, a specimen table 3 and an electrode 5 of the reaction furnace 1 and the specimen chamber 2 is cleansed and removed.

Inventors

• 👤 Seijiro Sano
• 👤 精二郎 佐野
• 👤 Toshio Ito
• 👤 寿雄 伊藤

Bibliographic Details