Formation of field oxide film

Abstract

Abstract PURPOSE:To reject formation of bird's beak and bird's head and realize high integration degree of semiconductor device by rejecting oxidation in the lateral direction of substrate with a silicon nitride film covering the side surface of concaved area in the element region on a silicon substrate. CONSTITUTION:A concaved area 11 is formed to the area which becomes element region of a silicon substrate 8 and a silicon nitride film 12 is formed to the entire part substrate 8 including the concaved area 11 by implanting the nitrogen ion. The silicon nitride film 12 is removed using a resist from the area other than the side surface 10 and bottom area 13 of the concaved area 11. The thermal oxidation is then conducted and the field oxide films 15, 15 are provided and thereby an element region 16 for forming function element such as transistor, etc. is defined. Oxidation is perfectly suppressed by the silicon nitride film 12 provided at the side surface 10 of concaved area 11 and thereby bird's beak and bird's head are not generated.

Inventors

• 👤 Nobuo Okumura
• 👤 信夫 奥村

Bibliographic Details