Light emitting semiconductor device

Abstract

Abstract PURPOSE:To improve the temperature dependency of a light output, by forming a current blocking part in an n-p-n-p or p-n-p-n type structure, and suppressing the operation of said current blocking part as a thyristor. CONSTITUTION:An n<-> type InP layer 20 is grown on an n type InP substrate 1. A p type InP layer 2 is grown on the layer 20. Then a stripe shaped V groove is formed. When an n type InP layer 3 is grown, an n type InP clad layer 4 is grown in the V groove. When an InGaAsP layer is grown on the layer 4 and a stripe shaped active layer 6 is grown, an InGaAsP layer 5 is also grown on the layer 3. Thereafter, a P type InP clad layer 7 is grown and a p type InGaAsP cap layer 8 is grown. Thus a current blocking part in p-n-p-n type layer structure is formed. A thyristor structure part including the p-n-p-n type structure can suppress the thyristor operation caused by a gate current that is leaked from a current path. Thus the temperature dependency of the light output from the light emitting semiconductor device can be improved.

Inventors

• 👤 Hiroshi Ishikawa
• 👤 浩 石川

Bibliographic Details