Vapor growth apparatus

Abstract

Abstract PURPOSE:To prevent the reaction product from adhering to a transparent plate and an intermediate transparent plate, by a method wherein carrier gas is blown out between the transparent plate and along lower surface of the intermediate transparent plate. CONSTITUTION:Infrared rays radiated from an infrared lamp heater unit 11 transmit a transparent quartz plate 12 and H type plate 24 so as to heat Si substrate 14. If mixed gas of source gas and doping gas is supplied through a gas supply port 19, the mixed gas flows towards an exhaust port 21 and during this process an epitaxial layer is formed on the substrate 14. At the same time non-reaction gas is supplied through a carrier gas supply port 28. The non- reaction gas flows out along upper and lower surfaces of the plate 24. Flowing along the upper surface fills a space between the plate 12 and the plate 24 and then flows to the exhaust port 21; flowing along the lower surface forms a non- reaction gas film at the lower surface of the plate 24. Thus the reaction product is prevented from adhering to the lower surface of the plate 12 and the upper and lower surfaces of the plate 24.

Inventors

• 👤 Junichi Nozaki
• 👤 野崎　順一
• 👤 Hirozo Shima
• 👤 島　博三

Bibliographic Details