Manufacture of static induction transistor

Abstract

Abstract PURPOSE:To enable to perform thermal diffusion of impurities in the depth direction having anisotropy, and to obtain a vertical SIT formed deep in the thickness direction of the structure by a method wherein ions of an element lighter than a doping impurity element are implanted to different implanting depths of the plural number, and annealing is performed. CONSTITUTION:The III group element of B, Al, Ga, etc., for example, of impurities to act as an acceptor are doped to an n<-> type layer 12 through thin SiO2 layer parts 26 at the parts corresponding to gate regions 16 and 18 or 20. Then, ions of an element lighter than the implanted impurities, B for example, are implanted in the parts corresponding to the gate regions 16 and 18 or 20 similarly. H or He is used for the light element thereof. Then, the whole of the structure implanted with the light element is annealed at a low temperature. As the annealing temperature, a comparatively low temperature of 500-1,200 deg.C is adopted, and desirably made to 700-900 deg.C.

Inventors

• 👤 Junichi Nishizawa
• 👤 潤一 西澤
• 👤 Soubee Suzuki
• 👤 鈴木　壮兵衛
• 👤 Mitsuru Ikeda
• 👤 満 池田
• 👤 Hideki Muto
• 👤 秀樹 武藤

Bibliographic Details