Electron beam exposing method

Abstract

Abstract PURPOSE:To eliminate relative deviation of mask from the stage by providing an alignment mark which is usually provided to the stage to the mask itself and obtaining the mark position data through detection of electrons reflected from said alignment mark when delineating mask with electron beam. CONSTITUTION:A substrate 3 is formed by vacuum-depositing a chromium film 2 on a low expansion glass 1 and a positive resist film 4 is applied on the film 2. The substrate 3 is loaded to a cassette and is fixed on the stage in the chamber. The inside of chamber is highly vacuumed and a cross pattern 6 for positioning is formed at the edge of film 4 by the scanning with electron beam 5. Thereafter, the pattern 6 is developed and is removed and a molybdenum film 7 is deposited on the entire part by the electron beam vacuum deposition method. The resist film 4 is lifted off together with the film 7 deposited thereon and thereby positioning mark 8 is cross pattern formed by protruded film 7 can be obtained. As a result, quality of mask can be improved.

Inventors

• 👤 Futoshi Tachiki
• 👤 立木　太

Bibliographic Details