Matrix type liquid crystal display device

Abstract

Abstract PURPOSE:To obtain the wiring of a thin-film transistor (TR) array which has low resistance and excellent interlayer insulation by using only polycrystalline silicon where impurities are doped for forming intersection parts of gate lines and a source line, and using Al, etc., for other parts of the gate lines. CONSTITUTION:An insulating substrate 8 on which numbers of thin-film transistors (TFT) 12 are formed is filmed with polycrystalline silicon doped with phosphor to 10<15>-10<16> pieces/cm<2> to a 500Angstrom film thickness by vacuum deposition, and patterning is performed to form the 1st gate line 2. Then, a film of SiN is formed by a plasma CVD method and patterned to form an interlayer insulating layer 13 having contact holes 14, and a film of Al alloy is formed by sputtering to a 7,000Angstrom thickness and patterned to form the 2nd gate line 15 short-circuiting the 1st gate line 2, source line 3, a drain electrode 11, and a display electrode 4.

Inventors

• 👤 Takao Matsumoto
• 👤 隆夫 松本

Bibliographic Details