Semiconductor device

Abstract

Abstract PURPOSE:To obtain a preferable ohmic contact with Si by forming a silicide layer on the part contacted with the Si and forming a high melting point metal carbide layer thereon. CONSTITUTION:Thermally oxidized films 12, 13 are formed on a P type Si substrate 1. Arsenic ions are implanted through the film 13, and an n<+> type diffused layer 14 is formed in the substrate 11. Then, a contacting hole 15 is opened, a molybdenum film 16 is formed, and a carbided titanium film 17 and a molybdenum film 18 are thereafter formed. The film 18 is formed to decrease the wiring resistance, and may be formed of carbided titanium. The film 16 is affected by the high temperature heat treatment in the steps of manufacturing a transistor to be performed later, and accordingly becomes a molybdenum silicide film 19.

Inventors

• 👤 Kohei Higuchi
• 👤 行平 樋口
• 👤 Hidekazu Okabayashi
• 👤 岡林　秀和

Bibliographic Details