Manufacture of buried hetero-structure semiconductor laser

Abstract

Abstract PURPOSE:To enable to have the titled semiconductor laser perform a proper function using only one blocking layer by a method wherein, when a buried region is formed on the semiconductor laser, a Zn diffusion layer to be used as a current blocking layer is formed in advance, an etching is performed selectively on the surface of an InGaAsP active layer when a mesa stripe is formed, and the active layer which is exposed at a groove part is meltbacked when burying process is performed. CONSTITUTION:An N type InP buffer layer 102, a non-doped InGaAsP active layer 103, and a P type clad layer 104 are formed by lamination on an N type InP substrate 101, an SiO2 film 105 is covered on the above, and two windows are provided in parallel. Then, grooves 106 and 107 are formed by performing an etching, and a mesa stripe 108 is grown between them. Subsequently, a Zn diffusion layer 109 is formed on the bottom face and the side wall of the grooves 106 and 107, and after the active layer 103 exposed in the groove has been meltbacked, all regions other than the stripe 108 is covered by an N type InP current blocking layer 110. Then, a P type InP buried layer is grown on the whole surface.

Inventors

• 👤 Mitsuhiro Kitamura
• 👤 北村　光弘
• 👤 Ikuo Mito
• 👤 郁夫 水戸
• 👤 Isao Kobayashi
• 👤 功郎 小林

Bibliographic Details