Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent disconnection and/or a short-circuit between layers by a method wherein a connecting hole is provided in a first insulating layer covering a lower layer wiring, concave parts on the surface are buried with polyimide resin to form the same plane with the first insulating layer, polyimide resin in the connecting hole is removed, and an upper layer wiring is provided. CONSTITUTION:The Al wiring 20 on an Si substrate 10 is covered with PSG 30, an opening is formed selectively, polyimide resin 50 is rotatingly applied to bury unevenness on the surface of PSG30, and the surface is flattened. Then polyimide resin 50 is etched up to expose the top face PSG30. When polyimide resin 50 in the penetrating hole part B is etched to be removed applying a resist mask 70 next, size of the opening B can be held. When the Al wiring 40 is stacked removing the mask 70, disconnection and the short-circuit between the lower layer wiring are not generated, nevertheless connection between the lower layer wiring can be attained easily through the small penetrating hole, and the degree of integration is enhanced.

Inventors

• 👤 Masataka Shinguu
• 👤 新宮　正孝

Bibliographic Details