Semiconductor device

Abstract

Abstract PURPOSE:To improve the reliability of the environmental test of a temperature cycle, etc. by forming a polyimide resin layer onto the whole surface of at least active region of a memory circuit and shaping liquefied resin, affinity thereof differs from said resin layer and which has low stress, onto the resin layer. CONSTITUTION:The polyimide resin layer 18 (3-30mum thickness) is formed onto at least whole surface of the active region 17 of a semiconductor memory element 12. The second organic resin layer 19-that is, a shielding layer for alpha-particles afterward radiated from the inside of molding resin 15-is shaped by potting liquefied resin, affinity thereof differs from said resin and which has low stress, to a sectin right above the resin layer 18. The liquefied resin does not flow down when it is applied onto the first resin layer 18 through a potting method because the affinity of the first resin layer 18 and the second resin layer 19 differs, and the second resin layer 19 can be formed. Accordingly, contact between a bonding wire and the liquefied resin can be prevented.

Inventors

• 👤 Takayuki Uno
• 👤 宇野　隆行

Bibliographic Details