Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the coverage of step of multipolar wiring structure largely by sputtering and etching a layer insulating film formed through a CVD method by inert gas ions. CONSTITUTION:When Ar gas is RF-sputtered onto the insulating film 4 shaped onto the first layer electrode wiring 31 in AlSi through the CVD method, Ar<+> ions are projected to a semiconductor substrate 1 approximately vertically. A sputtering phenomenon by Ar<+> ions, etc. largely depends upon an incident angle, and the etching rate is increased in an approximately quintuple extent when the ions are projected at approximately 45 deg. as compared to when they are projected vertically. Accordingly, the etching of a stepped section advances abnormally rapidly as compared to flat sections in the sputtering and etching of the insulating film 4, and the excellent sectional form of the coverage of step is obtained in shape after etching.

Inventors

• 👤 Katsuhiro Tsukamoto
• 👤 塚本　克博
• 👤 Hideo Kotani
• 👤 小谷　秀夫
• 👤 Hisao Yakushiji
• 👤 薬師寺　久雄
• 👤 Hiroji Harada
• 👤 原田　「ひろ」嗣
• 👤 Katsuhiro Hirata
• 👤 勝弘 平田

Bibliographic Details