Preparation of semiconductor single crystal film

Abstract

Abstract PURPOSE:To improve reproducibility of single crystal film by depositing the silicon on the exposed silicon substrate, forming a silicon film over the entire part of it and by single-crystallizing the silicon film through irradiation of laser, ion or electron beams. CONSTITUTION:An oxide film 12 of the specified thickness is formed on a silicon substrate 11 by the wet thermal oxidation method, an aperture 13 is opened by selectively removing such film 12 and a selective growth silicon 14 is formed only on the aperture 13 by the thermal processing under the hydrogen ambient. Thereafter, a poly-crystal or amorphous silicon film 15 is formed by the evaporation method over the entrire part. The laser beam or ion beam or electron beam or electron beam is irradiated to this film 15 and thereby it is converted into the single-crystallized silicon film 15'. Reflecting a crystal orientation of base material on the single crystal, reproducibility of film 15' is improved with the plane (100) considered as a film parallel to the film 12.

Inventors

• 👤 Iwao Higashinakagaha
• 👤 東中川　巌

Bibliographic Details