Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture an extremely high density MOSIC, by making a polycrystalline silicon film an insulating material as an oxide (SiO2), thereby excluding leaking currents between cells and enhancing the insulating effect between layers. CONSTITUTION:A part of a second gate polycrystalline silicon film remains in a concave part 14 at the lower part of a first gate polycrystalline silicon film 5. This part acts as a source of the leaking currents. The remaining polycrystalline silicon material is all made to be SiO2, by performing the first oxidation treatment, in which heat treatment is performed for ten minutes in an dried oxygen at 900 deg.C, and further performing the second oxidation treatment for thirty minutes in steam atmosphere at 900 deg.C. At the same time, an oxide film is grown on the second gate polycrystalline silicon film, and the insulating property is enhanced.

Inventors

• 👤 Jun Fukuchi
• 👤 福地　順
• 👤 Ichizo Kamei
• 👤 亀井　市蔵

Bibliographic Details