Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a thick wiring layer having an excellent degree of adhesion with a semiconductor substrate using a lift-off method by a method wherein a substance having the grating constant almost equal to that of the semiconductor is used on the semiconductor substrate as the thick film for a spacer. CONSTITUTION:A germanium Ge 12 as a thick film for spacer and an SiO2 13 as a thin film for spacer are formed on a GaAs semiconductor substrate 11, and besides, a desired aperture 14 is provided by forming a photoresist film 15. Then, an etching is performed selectively using the photoresist film 15 as a mask. In addition, a Ge 12 is etched using the resist film 15 and the SiO2 13 as a mask. Subsequently, an Al 16 is vapor-deposited, the resist film 15 is dissolved using a solvent, and, at the same time, the Al 16 is removed using a lift-off method. When the SiO2 13 is removed by etching, and lastly, the Ge 12 is removed by etching, the Al 16 wiring layer only of the desired pattern remains on the semiconductor.

Inventors

• 👤 Mikio Tatematsu
• 👤 立松　幹雄
• 👤 Kiyoo Kamei
• 👤 清雄 亀井

Bibliographic Details