Microwave circuit device

Abstract

Abstract PURPOSE:To shorten the distance between the strip line and the source of an FET in forming a self-bias circuit, by providing the strip line to ground the FET in a high-frequency way and connecting the strip line to a strip line of ground side via a DC blocking capacitor. CONSTITUTION:In a self-bias circuit consisting of lines 18, 20 through which DC and high-frequency signals pass and an FET at the ground side, a strip line 19 passing through high-frequency components is provided at the back side, the high-frequency loss is reduced by directly connecting the source of the FET and the strip line 19 at a through-hole 26, the surface is provided with a resistor 9 and a jumper 24 forming the self-bias circuit, which is connected to the source of the FET5, and the strip lines 18, 20 and the strip line 19 are connected via DC block capacitors 21, 22 and the self-bias circuit with less high frequency loss can be obtained.

Inventors

• 👤 Sadao Igarashi
• 👤 貞男 五十嵐

Bibliographic Details